The Gallium Arsenide (GaAs) is an important and mature group III-Ⅴ compound semiconductor, it's widely used in the field of optoelectronics and microelectronics. GaAs is mainly divided into two categories: semi-insulating GaAs and N-type GaAs. The semi-insulating GaAs is mainly used to make integrated circuits with MESFET, HEMT and HBT structures, which are used in radar, microwave and millimeter wave communications, ultra-high-speed computers and optical fiber communications. The  N-type GaAs is mainly used in LD, LED, near infrared lasers, quantum well high-power lasers and high-efficiency solar cells. 

Recomended Products:

GaAs wafer for LED N-Type

Dimention: 2 inch  |   3 inch  |  4 inch

Orientation: <100> to <111>15°±1.0°

Dopant: Si-doped N-Type

Resisitivity:0.8-9 E3

Polish: SSP  |  DSP

GaAs wafer for LD N-Type

Dimention: 2 inch, 3 inch, 4 inch

Orientation: <100> to <111> or <110>2° ±1.0°

Dopant: Si-doped N-Type

Resisitivity: 0.8-9 E3

Polish: SSP  |  DSP

GaAs wafer semi-insulating

Dimention: 2 inch, 3 inch, 4 inch

Orientation: <0001>

Dopant: un doped semi-insulating

Resisitivity: >1 E7

Polish: SSP  |  DSP

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Properties of GaAs 

GaAs has a direct band gap structure with dual energy valley. The crystal is dark gray with metallic luster. It is insoluble in hydrochloric acid at room temperature, can react with concentrated nitric acid, easily soluble in aqua regia, and stable in water vapor and oxygen. The material begins to oxidize be Heated to 6000 ℃, and begins to dissociate when heated to above 8000 ℃. The effective mass of electrons in GaAs is 1/15 of free electrons, 1/3 of silicon electrons. The switching speed of transistors made of GaAs is 3 to 4 times faster than silicon.

GaAs has high mobility and high saturation drift speed. In the weak electric field state, the electron mobility is about 8500cm^2 / (V*s), which is much larger than Silicon. As the electric field strength increases, the electron drift velocity of GaAs reaches a peak and then begins to decrease.

Through regional ion implantation, GaAs substrate can still maintain electrical isolation (semi-insulating). This property makes it very suitable for use as a substrate material for the production of integrated circuits. In addition, the parasitic capacitance of devices made of semi-insulating GaAs is very small, which can be used to manufacture fast devices, such as monolithic microwave integrated circuits. 

Application of GaAs  

In the field of optoelectronics, GaAs is used to make optoelectronic devices, such as light-emitting diodes, visible light lasers, near-infrared lasers, and quantum well high-power lasers. Compared with lasers made of other materials, GaAs lasers have many advantages: laser devices can be made very small, such as small torch-sized GaAs laser radars, which can generate 1.0 × 10^-11s pulses with 6W power; the GaAs compound semiconductor laser device has a long service life; large capacity is another important advantage of GaAs laser, with this laser communication, it can carry thousands of dialogue communication beams. 

In the field of microelectronics,  the high-speed digital circuits, microwave monolithic circuits, optoelectronic integrated circuits, high-power field-effect transistors developed with semi-insulating GaAs, have the characteristics of high frequency, low power consumption and radiation resistance. In the field of communications, semi-insulating  developed with semi-insulating GaAs are mainly used for high-frequency communication devices. Driven by the civilian wireless communications market in recent years, especially the mobile phone market, the market scale of semi-insulating  developed with semi-insulating GaAs has also grown rapidly. 

In the microwave field, compared with silicon microwave devices, GaAs devices are characterized by high power, high frequency, high gain, low noise, and can operate at lower voltages. The working efficiency of GaAs field effect transistors and avalanche diodes has reached dozens of gigacycles, and it is possible to break through 100 gigacycles. It's extremely important in radar and microwave communications. The GaAs microwave device has high capacity increase and low noise, it greatly improves the sensitivity of the microwave system. The GaAs gantry diode can work under the condition of operating voltage 5V to 7V, therefore, the GaA gantry diode can use a small-sized and light-weight power supply, which is extremely important for space technology. 

In the field of solar cells, GaA is a promising battery material. Silicon solar cells are the most widely used in the world, and its conversion efficiency can reach 18% to 20% at the highest, while the maximum efficiency of GaA solar cells is expected to reach 23% to 26%. GaA solar cells have strong radiation resistance, it can work in relatively high temperature environments.