The gallium nitride (GaN) semiconductor has a large band gap and high thermal conductivity. The GaN device can operate at a high temperature above 200 ° C, it carries higher energy density and higher reliability; GaN has a larger band gap and insulation destruction electric field , making the device's on-resistance reduced, which is conducive to improving the overall energy efficiency of the device; Its fast electron saturation speed and high carrier mobility can allow the device to work at high speed. 

Recomended Products: 

N-Type (Si-doped) GaN wafer

Dimention: 10*15mm (square)  |  2 inch (round)  |  4 inch (round)

Orientation：C-plane（0001）off angle toward M-Axis 0.35°±0.15° 

Dopant: Si-doped

Resistivity： ≤ 0.05 ohm.cm

Polish：SSP  |  DSP

N-Type (un-doped) GaN wafer

Dimention: 10*15mm (square)  |  2 inch (round)  |  4 inch (round)

Orientation：C-plane（0001）off angle toward M-Axis 0.35°±0.15° 

Dopant: un doped

Resistivity： ≤ 0.5 ohm.cm

Polish：SSP  |  DSP

GaN epitaxial on Sapphire substrate

Thickness of GaN: 4-20 um

More details please download <catalogue> and contact us by email... 

Properties of GaN

At atmospheric pressure, gallium nitride crystals are generally hexagonal wurtzite structure, it has 4 atoms in a cell, the atomic volume is about half of gallium arsenide (GaAs). Gallium nitride is insoluble in water, acid and alkali at room temperature, but dissolves at a very slow rate in hot alkali solution. Gallium nitride exhibits unstable characteristics under high temperature under HCL or H2 gas, and is most stable under N2 gas. Gallium nitride is an extremely stable compound and a hard high-melting material with a melting point of about 1700 ° C. Gallium nitride has a high degree of ionization, which is the highest among Group III-V compounds (0.5 or 0.43).

Electrically, unintentionally doped GaN is n-type in all cases, and the electron concentration of the best sample is about 4 × 10 ^16 / cm ^3. In general, the prepared P-type samples are highly compensated. The highest mobility data of gallium nitride at room temperature and liquid nitrogen temperature are μn = 600cm ^2 / v • s and μn = 1500cm ^2 / v • s, respectively, and the corresponding carrier concentration is n = 4 × 10 ^16 / cm ^3 and n = 8 × 10 ^15 / cm ^ 3. In recent years, the electron concentration values of MOCVD deposited gallium nitride layers are 4 × 10 ^16 / cm ^3, <10 ^16 / cm ^3; the result of plasma activation of MBE is 8 × 10 ^3 / cm ^3, 10 ^17 / cm ^3. The undoped carrier concentration can be controlled in the range of 10 ^14 ～ 10 ^20 / cm ^3. In addition, through the P-type doping process and Mg low-energy electron beam irradiation or thermal annealing treatment, the doping concentration can be controlled in the range of 10 ^11 ~ 10 ^20 / cm ^3. 

Advantages of GaN

1. GaN has a wide band gap at 3.4eV, and a high thermal conductivity at 1.3W /cm-K, its band gap width at room temperature is 3.39eV. GaN has excellent optical, electrical properties and excellent mechanical properties and thermal stability, it's an ideal material for the short-wavelength light-emitting device, the band gap of GaN and its alloys covers the spectral range from red to ultraviolet.

2. The bottom of the conduction band is at the Γ point, and the energy difference between the other energy valleys of the conduction band is large, so it is not easy to produce inter-valley scattering, so that a high field drift speed can be obtained (the electron drift speed is not easy to saturate), so it has a low Heat generation rate and high breakdown electric field.

3. GaN is easy to form mixed crystals with AlN, InN, etc., and can be made into various heterostructures. The 2-DEG with a mobility of 10 ^5cm ^2 /Vs at low temperature has been obtained (2-DEG has a high surface density, it effectively ground shields the factors such as optical phonon scattering, ionized impurity scattering and piezoelectric scattering).

4. Lattice symmetry is relatively low (hexagonal wurtzite structure or tetragonal metastable zinc blende structure), with strong piezoelectricity (due to non-central symmetry) and ferroelectricity (spontaneous polarization along the hexagonal C axis ): Very strong piezoelectric polarization (polarization electric field up to 2MV /cm) and spontaneous polarization (polarization electric field up to 3MV /cm) are generated near the heterojunction interface, which induces extremely high-density interfacial charge and is strongly modulated The energy band structure of the heterojunction is strengthened, and the two-dimensional space limitation of 2-DEG is strengthened, thereby increasing the areal density of 2-DEG (in AlGaN / GaN heterojunction can reach 10^13 / cm^2, which is higher than AlGaAs / GaAs An order of magnitude higher in the heterojunction), which makes sense for device operation. 

Application of GaN

GaN-based electronic devices: GaN has low heat generation rate and high breakdown electric field, it's an important material for developing high-temperature and high-power electronic devices and high-frequency microwave devices. With the advancement of MBE technology and the breakthrough of thin film growth technologies, a variety of GaN heterostructures have been successfully grown. New devices with GaN such as metal field effect transistors (MESFETs), heterojunction field effect transistors (HFETs), modulation doped field effect transistors (MODFETs), etc. Have been produced; AlGaN / GaN structure is the preferred material for making microwave devices, it has high electron mobility (2000cm^2 /v • s), high saturation speed (1 × 10^7cm /s), and low dielectric constant.

GaN-based optoelectronic devices: GaN is an ideal material for short-wavelength light-emitting device. The band gap of gallium nitride and its alloy covers the spectral range from red to ultraviolet. Since the development of homojunction GaN blue LEDs in Japan in 1991, InGaN / AlGaN double heterojunction super-bright blue LEDs and InGaN single quantum well GaNLEDs have been launched. At present, Zcd and 6cd single quantum well GaN blue and green LEDs have entered the stage of mass production, thus filling the gap of blue LEDs on the market for many years. The blue light-emitting device has a huge application market in the fields of high-density optical disc information access, all-optical display, and laser printers.